Physics-Based Phase Noise Analysis of CMOS RF Oscillators

Author

Hong, Sung Min ; Park, Chan Hyeong ; Lee, Myoung Jin ; Min, Hong Shick ; Park, Young June

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

95

Lastpage

98

Abstract

A TCAD framework that can predict the phase noise spectrum of the oscillator using the nonlinear perturbation analysis is developed. The device-circuit mixed-mode simulation technique based upon the shooting-Newton method is exploited to evaluate the periodic steady-state solution of the oscillator. The influence of noise sources inside the devices on the phase deviation is calculated in an efficient and accurate way using the perturbation projection vector. The output power spectrum can be easily obtained in this framework. As its application, the output power spectrum of a CMOS LC voltage-controlled oscillator is calculated

Keywords

CMOS integrated circuits; Newton method; integrated circuit modelling; integrated circuit noise; phase noise; radiofrequency oscillators; technology CAD (electronics); voltage-controlled oscillators; CMOS LC voltage-controlled oscillator; CMOS RF oscillators; TCAD framework; device-circuit mixed-mode simulation technique; noise sources; nonlinear perturbation analysis; periodic steady-state solution; perturbation projection vector; phase noise spectrum; physics-based phase noise analysis; shooting-Newton method; Circuit noise; Kirchhoff´s Law; Nonlinear equations; Phase noise; Power generation; Radio frequency; Semiconductor device noise; Steady-state; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282846

Filename

4061589