Deep salicidation using nickel for suppressing the floating body effect in partially depleted SOI-MOSFET

Author

Deng, F. ; Johnson, R.A. ; Dubbelday, W.B. ; Garcia, G.A. ; Asbeck, P.M. ; Lau, S.S.

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

78

Lastpage

79

Abstract

Salicidation is a well known technique to suppress the floating body effect because the silicide near the source/body junction acts as a sink for holes. In this paper, we investigate the effect of nickel silicide layers of varying thickness on the drain current kink effect, the anomalous subthreshold slope and the breakdown voltage in partially depleted SOI-MOSFET. We demonstrate that deep salicidation is highly effective in suppressing floating body effects

Keywords

MOSFET; electric breakdown; nickel compounds; semiconductor device metallisation; silicon-on-insulator; Ni₂Si; anomalous subthreshold slope; breakdown voltage; deep salicidation; drain current kink effect; floating body effect; partially depleted SOI-MOSFET; source/body junction; Conductivity; Immune system; Impact ionization; Intrusion detection; Microscopy; Nickel; Silicides; Silicon; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552502

Filename

552502