Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

Author

Sonoda, Ken´ichiro ; Ishikawa, Kiyoshi ; Eimori, Takahisa ; Tsuchiya, Osamu

Author_Institution

Production & Technol. Unit, Renesas Technol. Corp., Itami

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

115

Lastpage

118

Abstract

This paper discusses the discrete channel dopant effects on the threshold voltage shift by random telegraph signal (RTS) in MOSFETs. Appropriate grid spacing to incorporate discrete dopant effects in three dimensional device simulation is addressed to obtain consistent results with continuum limit. Considering discrete dopant effects, the threshold voltage shift of MOSFETs by RTS follows the log-normal distribution, while the threshold voltage itself follows the normal distribution. An analytical model for the distribution of the threshold voltage shift is also presented. The threshold voltage shift by RTS will become a serious concern in 50 nm flash memories and beyond

Keywords

MOSFET; flash memories; log normal distribution; normal distribution; random noise; semiconductor device models; semiconductor device noise; semiconductor doping; MOSFET; discrete channel dopant effects; flash memories; grid spacing; log-normal distribution; normal distribution; random telegraph signal; three dimensional device simulation; threshold voltage shift; Analytical models; Atomic measurements; Gaussian distribution; Ionization; Log-normal distribution; MOSFETs; Potential well; Semiconductor process modeling; Telegraphy; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282851

Filename

4061594