Stress Sensitivity of PMOSFET Under High Mechanical Stress

Author

Tekleab, D. ; Adams, V. ; Loiko, K. ; Winstead, B. ; Parsons, S. ; Grudowski, P. ; Foisy, M.

Author_Institution

Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

119

Lastpage

122

Abstract

Using PMOSFETs with a range of built-in process induced stress and four-point bending characterization, we present evidence that the stress response of PMOSFETs increases with channel stress. A novel method incorporating the characterization data with channel stress simulation has been developed which shows excellent agreement between our prediction and measured transistor performance data for nitride etch stop layer splits. Our analysis indicates that PMOSFETs will continue to show increasingly effective performance enhancement at higher channel stress

Keywords

MOSFET; semiconductor device models; stress effects; PMOSFET; built-in process induced stress characterization; channel stress simulation; four-point bending characterization; measured transistor performance; mechanical stress; nitride etch stop layer splits; stress response modeling; stress sensitivity; Compressive stress; Etching; MOSFET circuits; Performance analysis; Piezoresistive devices; Predictive models; Silicon; Stress measurement; Tensile stress; Transistors; four-point bending; high mechanical stress; modeling stress response; stress sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282852

Filename

4061595