Title :
An evaluation of Si and SiGe base bipolar transistors for high frequency and high speed applications-basic transport and design
Author :
Hinckley, J.M. ; Sankaran, V. ; Singh, J. ; Tiwari, S.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
Charge-carrier transport in pseudomorphically strained Si0.8 Ge0.2 grown on (001) Si has been modeled to understand the small-signal performance of the SiGe-base double-heterojunction bipolar transistor (DHBT). Minority-carrier electron and majority-carrier hole mobilities and diffusion coefficients for the base are determined by Monte Carlo calculations. The effects of strain are accounted for by altered band structure and scattering rates which are input to the Monte Carlo model. The small-signal behavior of the DHBT is calculated using a device model based on drift-diffusion transport equations with the mobilities and diffusion coefficients obtained from the Monte Carlo calculations as input. The results are compared to those for silicon bipolar transistors
Keywords :
Ge-Si alloys; Monte Carlo methods; carrier mobility; heterojunction bipolar transistors; minority carriers; semiconductor device models; semiconductor materials; HF applications; Monte Carlo calculations; Si; SiGe; band structure; bipolar transistors; charge carrier transport; device model; diffusion coefficients; double-heterojunction bipolar transistor; drift-diffusion transport equations; high speed applications; majority-carrier hole mobilities; minority carrier electron mobility; scattering rates; small-signal performance; Bipolar transistors; Brillouin scattering; Capacitive sensors; Frequency; Germanium silicon alloys; Light scattering; Monte Carlo methods; Optical scattering; Particle scattering; Silicon germanium;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79829
