Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations

Author

Kanemura, T. ; Izumida, T. ; Aoki, N. ; Kondo, M. ; Ito, S. ; Enda, T. ; Okano, K. ; Kawasaki, H. ; Yagishita, A. ; Kaneko, A. ; Inaba, S. ; Nakamura, M. ; Ishimaru, K. ; Suguro, K. ; Eguchi, K. ; Ishiuchi, H.

Author_Institution

Center for Semicond. Res. & Dev., Toshiba Corp., Yokohama

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

131

Lastpage

134

Abstract

We discussed the optimization of structure and doping profile of bulk-FinFETs by using 3D process and device simulations. The channel profile was determined so as to realize higher drive current as well as lower punch-through current. The analysis of stress field for bulk-FinFETs and SOI-FinFETs revealed that the channel stress induced by a stress liner (SL) in the bulk-FinFET is larger than that for the SOI-FinFET. In addition, we applied a raised source/drain (RSD) structure to the bulk-FinFETs and optimized doping profile in the RSD region. The combination of stress liner and RSD structure is found to be efficient for improving drive current of a bulk-FinFET

Keywords

MOSFET; semiconductor device models; semiconductor doping; semiconductor process modelling; stress analysis; stress effects; 3D process simulation; SOI-FinFET; bulk-FinFET; device simulation; doping profile; drive current; punch-through current; raised source-drain structure; stress field analysis; structure optimization; CMOS technology; Doping profiles; Drives; FinFETs; Implants; Indium tin oxide; Manufacturing processes; Research and development; Stress; Substrates; 3-D device simulation; 3-D process simulation; FinFET; TCAD; component; drive current; mobility enhancement; optimization; punch-through current; raised source/drain;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282855

Filename

4061598