• DocumentCode
    3233232
  • Title

    Piezoelectric materials for MEMS applications

  • Author

    Nguyen, Minh D. ; Karakaya, Koray ; te Riele, P. ; Blank, Dave H.A. ; Rijnders, Guus

  • Author_Institution
    Fac. of Sci. & Technol., Univ. of Twente, Enschede
  • fYear
    2008
  • fDate
    6-9 Jan. 2008
  • Firstpage
    315
  • Lastpage
    318
  • Abstract
    Epitaxial oxide YSZ/SRO/PZT/SRO capacitors have been grown on Si(001) substrates by pulsed laser deposition, and mechanisms of polarization switching and fatigue are investigated. It is found that a large remanent polarization and rectangularity of the P-E hysteresis loops are observed. For a constant applied electric field of 200 kV/cm, remanent polarization increased from 11.5 muC/cm2 to 14.3 muC/cm2 as the fatigue cycling increased up to 10 s cycles. The dielectric constant and dielectric loss of PZT capacitors were determined using capacitance measurement. It was observed that the PZT capacitors have a dielectric constant of about 1210 and dielectric loss of about 1.93% at 1 kHz and room temperature, which were comparable to those obtained at the higher frequencies (10 kHz - 1 MHz).
  • Keywords
    capacitors; dielectric hysteresis; dielectric losses; micromechanical devices; permittivity; remanence; silicon; MEMS; P-E hysteresis loops; PZT-Si; Si(001) substrates; capacitance measurement; dielectric constant; dielectric loss; epitaxial oxide capacitors; fatigue cycling; fatigue mechanism; frequency 10 kHz to 1 MHz; large remanent polarization; piezoelectric materials; polarization switching; pulsed laser deposition; Capacitors; Dielectric constant; Dielectric loss measurement; Dielectric losses; Fatigue; Micromechanical devices; Piezoelectric materials; Piezoelectric polarization; Pulsed laser deposition; Substrates; Dielectric properties; PZT; Piezoelectric films; Polarization fatigue;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-1907-4
  • Electronic_ISBN
    978-1-4244-1908-1
  • Type

    conf

  • DOI
    10.1109/NEMS.2008.4484342
  • Filename
    4484342