DocumentCode :
3233256
Title :
6-kV, 5.5-kA light-triggered thyristor
Author :
Katoh, Shuji ; Choi, Jai Ho ; Yokota, Takeshi ; Watanabe, Atsuo ; Yamaguchi, Tetsuo ; Saito, Katsuaki
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
fYear :
1997
fDate :
26-29 May 1997
Firstpage :
73
Lastpage :
76
Abstract :
A 6-kV, 5.5-kA light-triggered thyristor has been developed for BTB (back-to-back) converter systems. A double-diffused p emitter structure was used to improve the trade-off relationship between on-state voltage and blocking capability, and a high-injection low-lifetime structure was used to improve the trade-off relationship between on-state voltage and reverse recovery charge. The double-diffused p emitter consists of a thin p+ emitter in the main area and a thick p- emitter there and elsewhere. High injection was achieved by increasing the p+ emitter concentration and decreasing the p- emitter thickness. A locally controlled lifetime profile was used to compensate for the high injection efficiency. These structures decreased the on-state voltage by about 0.15 V
Keywords :
HVDC power convertors; carrier lifetime; photothyristors; thyristor convertors; 5.5 kA; 6 kV; HVDC power transmission; back-to-back converter systems; blocking capability; double-diffused p emitter structure; high injection efficiency; high-injection low-lifetime structure; light-triggered thyristor; locally controlled lifetime profile; on-state voltage; reverse recovery charge; thick p- emitter; thin p+ emitter; trade-off relationship; Doping; Energy conversion; Silicon; Temperature; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601435
Filename :
601435
Link To Document :
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