6-kV, 5.5-kA light-triggered thyristor

Author

Katoh, Shuji ; Choi, Jai Ho ; Yokota, Takeshi ; Watanabe, Atsuo ; Yamaguchi, Tetsuo ; Saito, Katsuaki

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

73

Lastpage

76

Abstract

A 6-kV, 5.5-kA light-triggered thyristor has been developed for BTB (back-to-back) converter systems. A double-diffused p emitter structure was used to improve the trade-off relationship between on-state voltage and blocking capability, and a high-injection low-lifetime structure was used to improve the trade-off relationship between on-state voltage and reverse recovery charge. The double-diffused p emitter consists of a thin p⁺ emitter in the main area and a thick p^- emitter there and elsewhere. High injection was achieved by increasing the p⁺ emitter concentration and decreasing the p^- emitter thickness. A locally controlled lifetime profile was used to compensate for the high injection efficiency. These structures decreased the on-state voltage by about 0.15 V

Keywords

HVDC power convertors; carrier lifetime; photothyristors; thyristor convertors; 5.5 kA; 6 kV; HVDC power transmission; back-to-back converter systems; blocking capability; double-diffused p emitter structure; high injection efficiency; high-injection low-lifetime structure; light-triggered thyristor; locally controlled lifetime profile; on-state voltage; reverse recovery charge; thick p^- emitter; thin p⁺ emitter; trade-off relationship; Doping; Energy conversion; Silicon; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601435

Filename

601435