Vacancy At Si-SiO2 Interface: Ab-Initio Study

Author

Kirichenko, Taras A. ; Yu, Decai ; Hwang, Gyenong S. ; Banerjee, Sanjay K.

Author_Institution

Freescale Semicond. Inc., Austin Silicon Technol. Solutions, TX

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

147

Lastpage

149

Abstract

Using density functional theory calculations within the generalized gradient approximation we have examined structure and dynamics of neutral Si vacancies at Si/SiO₂ interface. We show that Si/SiO₂ interface may serve as a limited sink for Si vacancies. Single vacancy and vacancy cluster defects are substantially more stable at c-Si/a-SiO₂ interface compared to the bulk c-Si layers away from interface, mainly due to termination of dangling bonds with bridging O atoms and reduction of interface strain

Keywords

ab initio calculations; density functional theory; elemental semiconductors; interface structure; semiconductor-insulator boundaries; silicon; silicon compounds; vacancies (crystal); Si-SiO₂; ab-initio study; dangling bonds; density functional theory; generalized gradient approximation; interface strain; interface structure; vacancy cluster defects; Amorphous materials; Atomic layer deposition; Capacitive sensors; Chemical engineering; Chemical technology; Density functional theory; Network topology; Silicon; Surface treatment; Temperature; Si; SiO2; diffusion vacancy; interface; point defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282859

Filename

4061602