Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation

Author

Eikyu, Katsumi ; Okagaki, Takeshi ; Tanizawa, Motoaki ; Ishikawa, Kiyoshi ; Eimori, Takahisa ; Tsuchiya, Osamu

Author_Institution

Renesas Technol. Corp., Hyogo

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

154

Lastpage

157

Abstract

A novel methodology is presented to generate the worst-case model including extraction of its compact model parameters. This method enables physically accurate worst-case prediction in the early stage of device development concurrently. It is found through the intensive TEG analysis and TCAD simulation that correlations between process factors have a significant impact on the worst-case corner estimation. A new extraction method of compact model parameters based on error propagation analysis is developed to consider correlations between parameters

Keywords

correlation methods; electronic engineering computing; error analysis; field effect transistors; semiconductor device models; semiconductor process modelling; statistical analysis; technology CAD (electronics); TCAD simulation; compact model parameters; correlation; error propagation analysis; global identification; intensive TEG analysis; statistical worst-case model generation; Analytical models; Error analysis; FETs; Mass production; Parameter extraction; Phase measurement; Predictive models; Random access memory; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282861

Filename

4061604