Design and performance of a W-band microstrip rat-race balanced mixer

Author

Zhao, Wei ; Zhang, Yong ; Zhan, Mingzhou

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

fDate

8-11 May 2010

Firstpage

713

Lastpage

716

Abstract

The design and measured characteristics of a W-band microstrip rat-race balanced mixer are presented in this paper. The single balanced mixer is realized by using a configuration of a rat-race hybrid-ring with five ports and two DMK2790 GaAs Schottky diodes. The radio frequency (RF) signal and local oscillator (LO) signal pass through the antipodal finline waveguide-to-microstrip transitions to the microstrip circuit. In order to verify the design, the mixer is fabricated on 0.127 mm thick Duroid RT 5880 substrate. Measurement result shows its conversion loss is less than 13.5 dB from 90 GHz to 97 GHz.

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; microstrip transitions; millimetre wave mixers; millimetre wave oscillators; DMK2790 GaAs Schottky diodes; Duroid RT 5880 substrate; GaAs; W-band microstrip rat-race balanced mixer; antipodal finline waveguide-to-microstrip transitions; conversion loss; frequency 90 GHz to 97 GHz; local oscillator signal; microstrip circuit; radio frequency signal; rat-race hybrid-ring mixer; single balanced mixer; size 0.127 mm; Circuits; Finline; Gallium arsenide; Local oscillators; Microstrip; Mixers; RF signals; Radio frequency; Schottky diodes; Waveguide transitions; W-band; antipodal finline; microstrip; millimeter wave; rat-race balanced mixer; waveguide-to-microstrip transition;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525038

Filename

5525038