Title :
Thickness and composition measurement for thin film with combined X-ray technique
Author :
Terada, Shinichi ; Murakami, Hiroyuki ; Nishihagi, Kazuo ; Noshiro, Hideyuki ; Horii, Yoshimasa
Author_Institution :
TECHNOS Co. Ltd, Japan
Abstract :
Newly introduced thin film materials such as Pb(Zr,Ti)O3 (PZT) present difficulties in the high-precision measurement of thickness and composition, which is essential for process control of film production. X-ray Fluorescence (XRF) is widely used for simultaneous measurement of both film thickness and composition. However, problems arise when XRF is applied to PZT/Pt/Ti stacked films, which comprise the most common structure for ferroelectric RAM (FeRAM) capacitors. The X-ray interference method (XI) based on X-ray reflectivity measurement (XRR) is known to enable absolute thickness measurement of film. On the other hand, grazing incidence X-ray fluorescence (GIXRF) is a surface-sensitive method that is suitable for composition measurement of PZT deposited on Pt/Ti layers. The authors have developed a combined X-ray apparatus that has the functions of XI and GIXRF and can be used to control the production of multilayer film for FeRAM capacitors
Keywords :
X-ray fluorescence analysis; X-ray reflection; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; thickness measurement; PZT thin film; PZT-Pt-Ti; PZT/Pt/Ti stacked film; PbZrO3TiO3-Pt-Ti; X-ray interference; X-ray reflectivity; composition measurement; ferroelectric RAM capacitor; grazing incidence X-ray fluorescence; multilayer film; thickness measurement; Capacitors; Composite materials; Ferroelectric films; Fluorescence; Nonvolatile memory; Optical films; Production; Random access memory; Thickness measurement; Transistors;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5217-3
DOI :
10.1109/ASMC.1999.798305
