Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-k dielectrics

Author

Ghosh, Bahniman ; Fan, Xiao-Feng ; Register, Leonard F. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

170

Lastpage

172

Abstract

In this work we perform full-band Monte Carlo simulations of nanoscale Ge bulk PMOSFETs with ultrathin (<2 nm ) effective oxide thickness high-kappa dielectrics and investigate the importance of remote Coulomb and remote surface roughness scattering in these devices. For a gate overdrive, (V_g-V_t), of 1.0 V, remote scattering mechanisms seem to decrease the saturation current by as much as 15% in these devices

Keywords

MOSFET; Monte Carlo methods; dielectric materials; elemental semiconductors; germanium; nanoelectronics; surface roughness; 1 V; Ge; full-band Monte Carlo simulation; nanoscale Ge bulk PMOSFET; remote Coulomb; remote surface roughness scattering; ultrathin high-kappa dielectrics; Degradation; High K dielectric materials; High-K gate dielectrics; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Phonons; Rough surfaces; Surface roughness; Germanium; Monte Carlo; remote Coulomb; remote surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282865

Filename

4061608