DocumentCode
3233458
Title
High frequency switching of power MOSFETs
Author
Hinchliffe, Stephen ; Hobson, Leslie
Author_Institution
Stanelco Products Ltd., Eastleigh, UK
fYear
1989
fDate
26-29 Jun 1989
Firstpage
190
Abstract
The effect of source inductance on the switching performance of power MOSFETs has been investigated. An IRF 450 in a T03 package was modified to include a second source lead for drive purposes. Switching tests have also been carried out on current-sending FETs and RF packaged power MOSFETs. The results are compared and related to high-frequency power convertor applications. Failure modes are also discussed
Keywords
insulated gate field effect transistors; power convertors; power transistors; switching; HF; IRF 450; T03 package; failure modes; power MOSFETs; power convertor; power transistors; source inductance; switching performance; Circuits; Frequency conversion; Inductance; MOSFETs; Packaging; Parasitic capacitance; Power supplies; Radio frequency; Switching frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location
Milwaukee, WI
Type
conf
DOI
10.1109/PESC.1989.48490
Filename
48490
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