DocumentCode
3233561
Title
Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films
Author
Ceric, H. ; Hollauer, C. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., Technische Univ. Wien
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
192
Lastpage
195
Abstract
We present a method for prediction of stress in poly-SiGe thin films based on the texture evolution. Models for different stress generation mechanisms are discussed and integrated in an overall simulation scheme. As example a three-dimensional cantilever structure is used to demonstrate the introduced approach, and simulation results are successfully compared with experiment
Keywords
Ge-Si alloys; grain boundaries; semiconductor materials; semiconductor thin films; stress effects; texture; SiGe; grain boundaries; intrinsic stress generation; texture; thin films; three-dimensional cantilever structure; three-dimensional simulation; Atomic layer deposition; Grain boundaries; Mathematical model; Micromechanical devices; Microstructure; Sputtering; Substrates; Temperature; Tensile stress; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282869
Filename
4061612
Link To Document