Silicon/Periodically Poled Transducer/Silicon resonant devices for the stabilization of RF oscillators

In this work, we present the design, manufacture and characterization of a PPT-based resonator based on a Silicon/PPT/Silicon structure, where the PPT can be built either using LiNbO₃ or LiTaO₃ ZX cut. These devices are operating as dipole resonators suitable for Colpitts oscillator stabilization. We present the resonator oscillation characteristics, more particularly the phase noise and the frequency stability. Furthermore, we discuss the advantages of thinning down the piezoelectric transducer taking advantage of the dispersion properties of such devices.