DocumentCode :
3233647
Title :
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs
Author :
Pourfath, M. ; Kosina, H. ; Cheong, B.H. ; Park, W.J. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Wien
fYear :
2006
fDate :
6-8 Sept. 2006
Firstpage :
208
Lastpage :
211
Abstract :
The non-equilibrium Green´s function formalism is employed to perform a comprehensive numerical study of carbon nanotube field-effect transistors. Due to numerous possible configurations of CNTs many different material parameters exists. The static and dynamic response of transistors is studied for a wide range of electron-phonon interaction parameters
Keywords :
Green´s function methods; carbon nanotubes; electron-phonon interactions; field effect transistors; nanotube devices; CNTFET; carbon nanotube field-effect transistors; dynamic response; electron-phonon interaction effect; material parameters; nonequilibrium Green´s function; static response; Carbon nanotubes; Charge carrier processes; Equations; FETs; Green´s function methods; Materials science and technology; Microelectronics; Potential well; Scattering; Semiconductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0404-5
Type :
conf
DOI :
10.1109/SISPAD.2006.282873
Filename :
4061616
Link To Document :
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