3D Mesh Generation with Wavelet-Driven Adaptivity

In this paper we show the effectiveness on 3-dimensional domains of a wavelet-based adaptive method (WAM), which is able to drive a progressive adaptation of computational meshes suited for semiconductor device simulation in order to capture sensible regions. An improved two-step wavelet analysis is performed on some relevant physical variables, allowing for a highly selective refinement of domain regions with stringent resolution requirements for simulation accuracy; moreover, a mesh quality control algorithm ensures a smooth grading of element sizes and eliminates bad configurations affecting convergence. Complex real structures can thus be handled with negligible computational overhead and with no skilled control from the user. Simulation results related to a 3D p-n diode and to different nMOSFET driver geometries demonstrate the capability of the proposed automatic tool to ensure good convergence and accuracy properties with considerable advantages over reference manually-constructed meshes of much larger size