Modeling of Cross-Talk Effects in Floating-Gate Devices Using TCAD Simulations

Author

Saad, Yv. ; Ciappa, M. ; Pfaffli, P. ; Bomholt, L. ; Fichtner, W.

Author_Institution

Synopsys Switzerland LLC, Zurich

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

224

Lastpage

227

Abstract

Technology CAD (TCAD) modeling is used to develop, analyze, and optimize flash memory devices under all operating conditions, taking into account three-dimensional effects such as cross-talk between the cells. A methodology for structure generation, meshing, device simulation, and characterization of flash memory devices is proposed. The results demonstrate the effectiveness of full 3D simulation models for flash memory cells, which capture the geometrical, physical, and electrostatic effects

Keywords

crosstalk; flash memories; mesh generation; semiconductor device models; technology CAD (electronics); TCAD; cross-talk effects; device simulation; electrostatic effects; flash memory device; floating-gate device; meshing; structure generation; technology CAD modeling; three-dimensional effects; Analytical models; Character generation; Electronic mail; Electrostatics; Flash memory; Flash memory cells; Laboratories; Nonvolatile memory; Predictive models; Solid modeling; TCAD simulations; component; cross-talk; flash memories;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282877

Filename

4061620