DocumentCode
3233837
Title
Flow Simulation: Advanced Dielectric Etch Equipment Design and Process Development
Author
Bera, Kallol ; Carducci, Jim ; Hoffman, Daniel ; Ma, Shawming
Author_Institution
Appl. Mater. Inc., Sunnyvale, CA
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
244
Lastpage
247
Abstract
With shrinkage in device size, use of new materials in multiple layers, and larger wafer size, control of process uniformity across the wafer becomes crucial in semiconductor manufacturing. Flow simulation has been used to design advanced dielectric etch equipment to achieve better flow uniformity. The ability to tune flow uniformity helped us to achieve various desired process characteristics, such as CD bias, profile, and etch stop across the wafer
Keywords
etching; flow simulation; semiconductor device manufacture; semiconductor device models; advanced dielectric etch equipment design; flow simulation; multiple layers; process development; semiconductor manufacturing; wafer; Dielectric devices; Dielectric materials; Etching; Plasma applications; Plasma simulation; Process control; Process design; Scanning electron microscopy; Semiconductor materials; Size control;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282881
Filename
4061624
Link To Document