• DocumentCode
    3233837
  • Title

    Flow Simulation: Advanced Dielectric Etch Equipment Design and Process Development

  • Author

    Bera, Kallol ; Carducci, Jim ; Hoffman, Daniel ; Ma, Shawming

  • Author_Institution
    Appl. Mater. Inc., Sunnyvale, CA
  • fYear
    2006
  • fDate
    6-8 Sept. 2006
  • Firstpage
    244
  • Lastpage
    247
  • Abstract
    With shrinkage in device size, use of new materials in multiple layers, and larger wafer size, control of process uniformity across the wafer becomes crucial in semiconductor manufacturing. Flow simulation has been used to design advanced dielectric etch equipment to achieve better flow uniformity. The ability to tune flow uniformity helped us to achieve various desired process characteristics, such as CD bias, profile, and etch stop across the wafer
  • Keywords
    etching; flow simulation; semiconductor device manufacture; semiconductor device models; advanced dielectric etch equipment design; flow simulation; multiple layers; process development; semiconductor manufacturing; wafer; Dielectric devices; Dielectric materials; Etching; Plasma applications; Plasma simulation; Process control; Process design; Scanning electron microscopy; Semiconductor materials; Size control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2006 International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0404-5
  • Type

    conf

  • DOI
    10.1109/SISPAD.2006.282881
  • Filename
    4061624