Through-wafer interconnects using carbon nanotubes synthesized by chemical vapor deposition

In this paper, through-wafer interconnects using carbon nanotube bundles grown by thermal chemical vapor deposition have been reported. The authors have demonstrated a reliable process of synthesizing aligned carbon nanotube bundles through two bonded silicon wafers. The top wafer (100 mum thick) with patterned through-holes allows carbon nanotubes to grow vertically from the catalyst layer (Fe) on the bottom wafer. The maximum length and minimum diameter of the bundles are 200 mum and 30 mum, respectively. The resistivity of the bundles is measured to be 0.0148 Omegacm by using a nano-manipulator.