Numerical Analysis of Destruction Mechanisms of NPT- and FS-IGBTs in Forward Blocking Mode

Author

Knipper, U. ; Wachutka, G. ; Pfirsch, F. ; Raker, T.

Author_Institution

Inst. of Phys. of Electrotechnol., Munich Univ. of Technol.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

275

Lastpage

278

Abstract

We studied different destruction modes of planar cell 1200V "non-punch-through" and "fieldstop" insulated gate bipolar transistors in forward blocking mode using simulation tools. Branches of negative differential resistance are explained with certain device properties and a dynamic distortion of the electric field. Careful design of the device avoid these regions which may lead to current concentration and finally device destruction

Keywords

electric fields; insulated gate bipolar transistors; negative resistance; numerical analysis; FS-IGBT; NPT; current concentration; device destruction mechanism; dynamic distortion; electric field; fieldstop insulated gate bipolar transistor; forward blocking mode; negative differential resistance; nonpunch-through; numerical analysis; planar cell; Current density; Doping; Electric resistance; Heat sinks; Insulated gate bipolar transistors; Isothermal processes; Numerical analysis; Physics; Semiconductor optical amplifiers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282889

Filename

4061632