Title :
X-band receiver protector using glass technology
Author :
Keenan, R. ; Higham, Eric
Author_Institution :
Microelectron. Div., M/A-COM Inc., Burlington, MA, USA
Abstract :
This paper describes a receiver protector providing passive limiting and active switching for an X-band phased array radar. The 1650 /spl mu/m/spl times/4440 /spl mu/m circuit uses a glass integrated circuit process and discrete PIN diodes to achieve the following results: loss 1.0 dB; VSWR 1.25:1; isolation 40 dB; power handling 10 W CW.<>
Keywords :
microwave integrated circuits; p-i-n diodes; phased array radar; protection; radar receivers; transceivers; 1 dB; 10 W; 1650 mum; 4440 mum; 6 to 12 GHz; M/A-COM glass technology; VSWR; X-band phased array radar; X-band receiver protector; active switching; discrete PIN diodes; glass integrated circuit process; isolation; passive limiting; power handling; Dielectric losses; Etching; Glass; Integrated circuit technology; Limiting; Phased arrays; Power system protection; Schottky diodes; Silicon; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406164
