Development of a Full 3D NEGF Nano-CMOS Simulator

Author

Martinez, A. ; Barker, J.R. ; Asenov, A. ; Bescond, M. ; Svizhenko, A. ; Anantram, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

353

Lastpage

356

Abstract

We describe the development of a new fully 3D NEGF simulator. At this stage we illustrate the use of the corresponding 3D NEGF solver to study, non-self consistently, the effect of the spatial inhomogeneities caused by stray charges and rough Si/SiO₂ interface in nano-CMOS devices. These cannot be accurately described using perturbative techniques. The use of decoupled simulations is justifiable in the subthreshold region of device operation. In the presence of the above imperfections the current and charge density have a distinct 3D character

Keywords

CMOS integrated circuits; Green´s function methods; interface roughness; nanoelectronics; silicon compounds; 3D NEGF; Si-SiO₂; SiO₂; nano-CMOS simulator; nonequilibrium Green function; perturbative technique; rough Si-SiO₂ interface; spatial inhomogeneity effect; stray charge; Computational modeling; Electrons; Equations; Fluctuations; Geometry; Green function; MOSFETs; Mechanical engineering; Nanoscale devices; Quantum mechanics; Nanotransistor; Non Equillibrium Green Function; three dimentional quantum simulations; unintentional dopants;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282907

Filename

4061650