DocumentCode
3234576
Title
Analysis of Electronic Threshold of PRAM Cell Operation
Author
Kim, YoungTae ; Lee, KeunHo ; Park, YoungKwan ; Kong, JeongTaek
Author_Institution
CAE Team, Samsung Electron. Co. Ltd., Gyeonggi-Do
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
393
Lastpage
396
Abstract
In this paper, the analysis of the switching characteristics of a PRAM cell is performed with 2-dimentional transport simulation considering with band gap model. The behaviors of the basic I-V and key characteristic parameters are well described with the simulation. The scaling analysis on the electrical switching demonstrates that the threshold voltage increases as the bottom electrode is scaled down and it will be one of key concerns of future device scaling and development
Keywords
energy gap; random-access storage; semiconductor device models; semiconductor storage; PRAM cell operation; band gap model; electrical switching; electronic threshold; phase-change random access memory; scaling analysis; transport simulation; Amorphous materials; Analytical models; Circuit simulation; Computer aided engineering; Crystallization; Doping; Electron traps; Performance analysis; Phase change random access memory; Threshold voltage; PRAM; phase change; simulation; snap-back; switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282917
Filename
4061660
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