DocumentCode
3234598
Title
Design Optimization of Large Area Si/SiGe Thermoelectric Generators
Author
Wagner, M. ; Span, G. ; Holzert, S. ; Grasser, T.
Author_Institution
Inst. for Microelectron., TU Wien
fYear
2006
fDate
6-8 Sept. 2006
Firstpage
397
Lastpage
400
Abstract
We present a comparison of large area pn-junction thermoelectric generators and classical thermoelectric modules. In contrast to conventional thermocouples, the thermal generation of carriers is explicitly used within the new device structures. The gradient of the pn-junction´s built-in potential causes the separation of the thermally generated carriers. For the application of waste heat recovery, the device is exposed to an external temperature gradient along the pn-junction which induces driving forces to both electrons and holes from the heated to the cooled end of the structure, where contacts are applied. The influence of device geometry and material composition on the device behavior is investigated. Simulation results obtained by our device and circuit simulator MiNiMOS-NT working in conjunction with the optimization framework SIESTA are presented
Keywords
Ge-Si alloys; elemental semiconductors; heat recovery; optimisation; p-n junctions; semiconductor device models; semiconductor devices; semiconductor materials; silicon; thermoelectric conversion; MiNiMOS-NT; SIESTA; Si-SiGe; circuit simulator; external temperature gradient; large area Si-SiGe thermoelectric generator; optimization; pn-junction; thermally generated carrier; waste heat recovery; Charge carrier processes; Circuit simulation; Design optimization; Geometry; Germanium silicon alloys; Heat recovery; Silicon germanium; Temperature; Thermoelectricity; Waste heat;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Conference_Location
Monterey, CA
Print_ISBN
1-4244-0404-5
Type
conf
DOI
10.1109/SISPAD.2006.282918
Filename
4061661
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