Research on Si-based MEMS process in development 3D millimeter-wave multi-chip module package

A low cost & feasible system on package solution on the basis of BCB and silicon wafer (10 Ohm·mm)-Si-Based 3D MMCM package solution is presented in this paper. What is more, a standard Si-Based MEMS process is employed to achieve package and revision of a GaAs-Based Monolithic Amplifier circuit. The measured results show that input return loss is less than 20 dB; moreover, small signal gain is more than 17 dB across 21 GHz to 26 GHz. The excellent measured results make the Si-based 3D-MMCM package solution a very attractive and feasible candidate for millimeter-wave 3D system level package applications. It is a step towards achievement of 3D system level package meeting excellent millimeter-wave performance.