A C-band 4-stage low noise miniaturized amplifier using lumped elements

Author

Tsukahara, Yuki ; Chaki, Sagar ; Sasaki, Yutaka ; Nakahara, Kouji ; Andoh, N. ; Matsubayasi, H. ; Tanino, N. ; Ishihara, O.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

1125

Abstract

A C-band monolithic four-stage low noise miniaturized amplifier has been developed. It employs lumped elements for the matching circuit to reduce the chip size. In the design of the IC, an integrated CAD system was used to consider parasitic microwave components. The 1.65 mm/spl times/2.30 mm amplifier achieved a gain of over 40 dB with a noise figure of less than 1.7 dB. The amplifier gives a minimum noise figure of 1.54 dB and a gain of 41 dB. A good agreement between measured and simulated data has been achieved.<>

Keywords

MMIC amplifiers; field effect MMIC; impedance matching; integrated circuit design; integrated circuit noise; 1.54 to 1.7 dB; 4-stage LNA; 40 to 41 dB; C-band; integrated CAD system; low noise miniaturized amplifier; lumped elements; matching circuit; parasitic microwave components; Costs; Gain measurement; Integrated circuit noise; Laboratories; Low-noise amplifiers; MMICs; Microwave devices; Microwave integrated circuits; Noise figure; RNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406169

Filename

406169