DocumentCode :
3234714
Title :
Effect of total dose radiation on FETs fabricated in UNIBONDTM SOI material
Author :
Liu, S.T. ; Jenkins, W.C.
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
fYear :
1996
fDate :
30 Sep-3 Oct 1996
Firstpage :
94
Lastpage :
95
Abstract :
Fabricates NMOS FETs in UNIBONDTM material and measures their radiation performance. The back channel threshold voltage shift was 18 V at 1 Mrad (SiO2), thus demonstrating the suitability of this material for radiation hard device processing
Keywords :
MOSFET; radiation effects; radiation hardening (electronics); semiconductor device reliability; silicon-on-insulator; 18 V; NMOS FETs; SOI material; Si; UNIBOND; back channel threshold voltage shift; radiation hard device processing; total dose radiation; Atomic force microscopy; Boats; Contracts; FETs; Hafnium; Laboratories; MOSFETs; Materials testing; Silicon on insulator technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-3315-2
Type :
conf
DOI :
10.1109/SOI.1996.552510
Filename :
552510
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3234714
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