• DocumentCode
    3234714
  • Title

    Effect of total dose radiation on FETs fabricated in UNIBONDTM SOI material

  • Author

    Liu, S.T. ; Jenkins, W.C.

  • Author_Institution
    Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
  • fYear
    1996
  • fDate
    30 Sep-3 Oct 1996
  • Firstpage
    94
  • Lastpage
    95
  • Abstract
    Fabricates NMOS FETs in UNIBONDTM material and measures their radiation performance. The back channel threshold voltage shift was 18 V at 1 Mrad (SiO2), thus demonstrating the suitability of this material for radiation hard device processing
  • Keywords
    MOSFET; radiation effects; radiation hardening (electronics); semiconductor device reliability; silicon-on-insulator; 18 V; NMOS FETs; SOI material; Si; UNIBOND; back channel threshold voltage shift; radiation hard device processing; total dose radiation; Atomic force microscopy; Boats; Contracts; FETs; Hafnium; Laboratories; MOSFETs; Materials testing; Silicon on insulator technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1996. Proceedings., 1996 IEEE International
  • Conference_Location
    Sanibel Island, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3315-2
  • Type

    conf

  • DOI
    10.1109/SOI.1996.552510
  • Filename
    552510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3234714