DocumentCode
3234992
Title
Modelling of passive elements for coplanar SiGe MMIC´s
Author
Doerner, Ralf ; Gerdes, J. ; Rheinfelder, C. ; Schmuckle, F.J. ; Heinrich, Wolfgang ; Strohm, K. ; Schaffler, F. ; Luy, J.-F.
Author_Institution
Ferdin and Braum Inst. fur Hochstfrequenztech., Berlin, Germany
fYear
1995
fDate
16-20 May 1995
Firstpage
1187
Abstract
As the first step in the development of coplanar SiGe MMIC´s, modelling and experimental results on passive components are presented. The investigations demonstrate that parasitic effects induced by passivation of high-resistivity silicon substrates play an important role. Efficient CAD tools are developed and verified by comparison with measurements.<>
Keywords
Ge-Si alloys; MMIC; coplanar waveguides; integrated circuit modelling; semiconductor materials; CAD tools; CPW; SiGe; coplanar SiGe MMIC; parasitic effects; passive element modelling; spiral inductors; Attenuation; Coplanar waveguides; Dielectric constant; Frequency; Germanium silicon alloys; MMICs; Passivation; Semiconductor device modeling; Silicon compounds; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406183
Filename
406183
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