Quadrature regenerative frequency dividers using HEMT technology

Author

Su, Jen-Yi ; Meng, Chinchun ; Tsung, Kuan-Chang ; Huang, Guo-Wei

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

8-11 May 2010

Firstpage

1944

Lastpage

1947

Abstract

Using two high electron mobility transistor (HEMT)-based technologies, divide-by-two quadrature regenerative frequency dividers (RFDs) are demonstrated. One is the 0.15-μm AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) technology with 85-GHz cutoff frequency and the other is the 0.15-μm InAlAs/InGaAs metamorphic HEMT (mHEMT) technology with 110-GHz cutoff frequency. The demonstrated 22~26-GHz pHEMT quadrature RFD consumes 28.4 mA at the supply voltage of 7 V while the 36.5~38.1-GHz mHEMT one consumes 16.9 mA at the supply voltage of 6V. Thus, the mHEMT quadrature RFD operates at high frequency and has lower power consumption as compared to the pHEMT one.

Keywords

III-V semiconductors; aluminium compounds; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; InAlAs-InGaAs; current 16.9 mA; current 28.4 mA; frequency 110 GHz; frequency 22 GHz to 26 GHz; frequency 36.5 GHz to 38.1 GHz; frequency 85 GHz; high electron mobility transistor; mHEMT technology; metamorphic HEMT technology; pHEMT technology; pseudomorphic HEMT technology; quadrature RFD; quadrature regenerative frequency dividers; size 0.15 mum; voltage 6 V; voltage 7 V; Cutoff frequency; Energy consumption; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; PHEMTs; Voltage; mHEMTs; divide-by-two divider; metamorphic high electron mobility transistor (mHEMT); pseudomorphic high electron mobility transistor (pHEMT); quadrature; regenerative frequency divider (RFD);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525114

Filename

5525114