A heterojunction bipolar transistor large-signal model for high power microwave applications

Author

Samelis, Apostolos ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

1231

Abstract

A large-signal model is presented for HBT´s. The model accounts for self-heating effects and is based on the Gummel-Poon formulation. Full model compatibility with the commercially available software package LIBRA is ensured. The model incorporates temperature dependence for most of its parameters and has been employed for the analysis of the DC and microwave power characteristics of AlGaAs-GaAs HBT´s. Good agreement between simulated and directly measured DC and microwave characteristics support the validity of the model.<>

Keywords

equivalent circuits; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; AlGaAs-GaAs; DC power characteristics; Gummel-Poon formulation; HBT model; LIBRA software package compatibility; heterojunction bipolar transistor; high power microwave applications; large-signal model; microwave power characteristics; self-heating effects; temperature dependence; Application software; Forward contracts; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Photonic band gap; Solid state circuits; Temperature dependence; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406193

Filename

406193