DocumentCode
3235165
Title
Differential electroabsorption spectra of InGaN/GaN QWs with indium surface segregation
Author
Klymenko, Mykhailo ; Shulika, Oleksiy ; Garcia, J. Rosales
Author_Institution
Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
fYear
2011
fDate
5-9 Sept. 2011
Firstpage
1
Lastpage
2
Abstract
In this work, we investigate the influence of the indium surface segregation on the differential absorption observed for different inverse biases applied to the structure. Obtained results evidence that the indium surface segregation leads to more sharp dependence of the absorption on the applied bias for a wide frequency range above the red edge. This feature can be used for experimental measurements of the segregation lengths applying optical spectroscopy.
Keywords
III-V semiconductors; absorption coefficients; electroabsorption; gallium compounds; indium compounds; semiconductor quantum wells; surface segregation; wide band gap semiconductors; InGaN-GaN; absorption coefficient; differential electroabsorption spectra; indium surface segregation; inverse biases; optical spectroscopy; quantum well; Gallium nitride; Nonhomogeneous media; Optical diffraction; Optical polarization; Periodic structures; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location
Kharkov
ISSN
Pending
Print_ISBN
978-1-61284-811-2
Type
conf
DOI
10.1109/LFNM.2011.6144965
Filename
6144965
Link To Document