Electron-diffraction transistors

Author

Bernstein, G.H. ; Kriman, A.M.

Author_Institution

Dept. of Electr. & Comput. Eng., Notre Dame Univ., IN, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

246

Lastpage

254

Abstract

The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and viewing screen of an analogous optical system, respectively. Experimental results on QUADFETs are presented

Keywords

high electron mobility transistors; Fraunhofer diffraction; QUADFET; electron diffraction transistor; high-electron-mobility transistors; light source; quantum diffraction field effect transistors; viewing screen; Electric variables; Electron optics; FETs; HEMTs; MODFETs; Optical diffraction; Optical scattering; Performance analysis; Semiconductor devices; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79841

Filename

79841

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3235175