Title :
Electron-diffraction transistors
Author :
Bernstein, G.H. ; Kriman, A.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Notre Dame Univ., IN, USA
Abstract :
The design, fabrication, and applications of QUADFETs (quantum diffraction field effect transistors) are described. The QUADFETs will enable Fraunhofer diffraction to be demonstrated and exploited. These devices are high-electron-mobility transistors (HEMTs), in which the source and a specially formed drain perform the functions of the light source and viewing screen of an analogous optical system, respectively. Experimental results on QUADFETs are presented
Keywords :
high electron mobility transistors; Fraunhofer diffraction; QUADFET; electron diffraction transistor; high-electron-mobility transistors; light source; quantum diffraction field effect transistors; viewing screen; Electric variables; Electron optics; FETs; HEMTs; MODFETs; Optical diffraction; Optical scattering; Performance analysis; Semiconductor devices; Solid state circuits;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79841
