DocumentCode :
3235186
Title :
Influence of substrate on temperature distribution in nitride laser diodes
Author :
Klymenko, Mykhailo ; Shulika, Oleksiy ; Sukhoivano, Igor
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
fYear :
2011
fDate :
5-9 Sept. 2011
Firstpage :
1
Lastpage :
2
Abstract :
In this work, we investigate the influence of the substrate material on the temperature distribution in the active region of the nitride-based quantum well UV light-emitting diodes. Results of mathematical modeling show that the application of the GaN substrate leads to a reduction of the averaged temperature in the active region of a few tens of degrees Kelvin comparing with the sapphire substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; light emitting diodes; quantum well lasers; temperature distribution; wide band gap semiconductors; AlGaN; GaN; GaN substrate; mathematical modeling; nitride laser diodes; nitride-based quantum well light-emitting diodes; sapphire substrate; substrate material; temperature distribution; Conductivity; Heating; Quantum well devices; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location :
Kharkov
ISSN :
Pending
Print_ISBN :
978-1-61284-811-2
Type :
conf
DOI :
10.1109/LFNM.2011.6144966
Filename :
6144966
Link To Document :
بازگشت