DocumentCode
3235245
Title
Modeling MESFETs for intermodulation analysis of resistive FET mixers
Author
Virk, Rajinder Singh ; Maas, S.A.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
1247
Abstract
This paper describes a new method for calculating intermodulation distortion in resistive FET mixers. By utilizing an expression for the I/V characteristics of the MESFET device whose parameters are fitted to the static I/V and its derivatives, this model accurately predicts distortion and is the first of its kind to be shown valid for resistive FET mixers.<>
Keywords
Schottky gate field effect transistors; equivalent circuits; intermodulation distortion; microwave field effect transistors; microwave mixers; semiconductor device models; I/V characteristics; IMD; MESFET modelling; intermodulation analysis; intermodulation distortion; resistive FET mixers; Conductivity measurement; Distortion measurement; Equivalent circuits; FETs; Gallium arsenide; Intermodulation distortion; MESFETs; Mixers; Predictive models; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406197
Filename
406197
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