DocumentCode
3235249
Title
Hollow stems for higher micromechanical disk resonator quality factor
Author
Wu, Lingqi ; Akgul, Mehmet ; Ren, Zeying ; Lin, Yang ; Li, Wei-Chang ; Nguyen, Clark T -C
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
1964
Lastpage
1967
Abstract
The use of hollow support stems to reduce energy loss to the substrate while supporting all-polysilicon UHF micromechanical disk resonators has enabled quality factors as high as 56,061 at 329 MHz and 93,231 at 178 MHz - values now in the same range as previous disk resonators employing multiple materials with more complex fabrication processes. With a substantially smaller cross-sectional area compared with the full stems used by predecessors, the hollow stem of this work effectively squeezes the energy conduit between the disk structure and the substrate, thereby suppressing energy loss and maximizing Q for devices operating in radial-contour and whispering gallery modes. Measurements confirm Q enhancements of 2.6× for contour modes at 154 MHz and 2.9× for wine glass modes around 112 MHz over values previously achieved by full stem all-polysilicon disk resonators with identical dimensions. The measured results not only demonstrate an effective Q-enhancement method with minimal increase in fabrication complexity, but also provide insights into anchor loss mechanisms that have been largely responsible for limiting the Q´s attainable by all-polysilicon capacitively-transduced MEMS resonators.
Keywords
Q-factor; UHF resonators; micromechanical resonators; MEMS resonators; Q enhancements; UHF micromechanical disk resonators; complex fabrication process; energy loss; hollow stems; quality factor; Electrodes; Frequency measurement; Glass; Q measurement; Resonant frequency; Substrates; Whispering gallery modes; anchor loss; communications; filter; hollow stem; micromechanical resonator; oscillator; quality factor;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location
Orlando, FL
ISSN
1948-5719
Print_ISBN
978-1-4577-1253-1
Type
conf
DOI
10.1109/ULTSYM.2011.6293678
Filename
6293678
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