Ultrashort optical interconnections of peripheral devices for next generation data processing systems

Author

Lysak, V.V.

fYear

2011

fDate

5-9 Sept. 2011

Firstpage

1

Lastpage

2

Abstract

We present a theoretical and experimental analysis on the static and modulation characteristics of components for 10 Gb/s ultrashort optical interconnects. Numerical analysis of geometrical parameters for optical light source and detector shows optimal values where bandwidth is maximal. Intracavity-contacted oxide confined vertical cavity surface emitted lasers and resonant cavity enhanced photodiode are presented as good choice for next generation high-speed optical interconnects.

Keywords

high-speed optical techniques; numerical analysis; optical interconnections; surface emitting lasers; bit rate 10 Gbit/s; geometrical parameters; intracavity-contacted oxide confined vertical cavity surface emitted lasers; modulation characteristics; next generation data processing systems; next generation high-speed optical interconnects; numerical analysis; optical detector; optical light source; peripheral devices; resonant cavity enhanced photodiode; static characteristics; ultrashort optical interconnections; Indexes; Integrated optics; Lasers; Lead; Optical device fabrication; Optical modulation; Optical sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on

Conference_Location

Kharkov

ISSN

Pending

Print_ISBN

978-1-61284-811-2

Type

conf

DOI

10.1109/LFNM.2011.6144973

Filename

6144973