Title :
Quantum-well resonant-tunneling transistors
Author :
Seabaugh, A.C. ; Frensley, W.R. ; Kao, Y.C. ; Randall, J.N. ; Reed, M.A.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; hot electron transistors; indium compounds; semiconductor quantum wells; solid-state microwave devices; GaAs-AlGaAs-InGaAs transistor; QuESTT; RHET; bipolar resonant-tunneling transistors; digital application; microwave applications; quantum excited-state tunneling transistor; quantum well; resonant-tunneling diode structure; resonant-tunneling hot electron transistor; semiconductor; unipolar transistors; Circuits; Diodes; Electrons; FETs; Indium compounds; Indium gallium arsenide; Ohmic contacts; Quantum computing; Quantum wells; Resonant tunneling devices;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79842
