Quantum-well resonant-tunneling transistors

Author

Seabaugh, A.C. ; Frensley, W.R. ; Kao, Y.C. ; Randall, J.N. ; Reed, M.A.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

255

Lastpage

264

Abstract

The authors demonstrate bipolar resonant-tunneling transistors and propose unipolar transistors which are formed by making direct contact with the quantum well of a resonant-tunneling diode structure. The characteristics of this resonant-tunneling hot electron transistor (RHET), known as the QuESTT (quantum excited-state tunneling transistor), are examined. Both digital and microwave applications for these devices are discussed

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; hot electron transistors; indium compounds; semiconductor quantum wells; solid-state microwave devices; GaAs-AlGaAs-InGaAs transistor; QuESTT; RHET; bipolar resonant-tunneling transistors; digital application; microwave applications; quantum excited-state tunneling transistor; quantum well; resonant-tunneling diode structure; resonant-tunneling hot electron transistor; semiconductor; unipolar transistors; Circuits; Diodes; Electrons; FETs; Indium compounds; Indium gallium arsenide; Ohmic contacts; Quantum computing; Quantum wells; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79842

Filename

79842