Title :
Field analysis and design criteria for T-gate TW-FET´s with positive gain
Author :
Farina, Marcello ; Pierantoni, Luca ; Rozzi, T.
Author_Institution :
Dipartimento di Elettronica e Autom., Ancona Univ., Italy
Abstract :
We present an accurate e.m. model of T-Gate TW-FET´s and necessary conditions for obtaining exponentially growing waves. This model takes into detailed account device geometry, the effect of carrier velocity saturation in the high field region, conductor and dielectric losses and small signal channel current.<>
Keywords :
carrier mobility; microwave field effect transistors; semiconductor device models; EM model; T-gate TW-FETs; carrier velocity saturation; design criteria; device geometry; dielectric losses; exponentially growing waves; high field region; positive gain; small signal channel current; travelling wave FETs; Conductivity; Conductors; Dielectric devices; Dielectric losses; FETs; Geometry; Guidelines; Optical propagation; Solid modeling; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406202
