DocumentCode
3235364
Title
Field analysis and design criteria for T-gate TW-FET´s with positive gain
Author
Farina, Marcello ; Pierantoni, Luca ; Rozzi, T.
Author_Institution
Dipartimento di Elettronica e Autom., Ancona Univ., Italy
fYear
1995
fDate
16-20 May 1995
Firstpage
1269
Abstract
We present an accurate e.m. model of T-Gate TW-FET´s and necessary conditions for obtaining exponentially growing waves. This model takes into detailed account device geometry, the effect of carrier velocity saturation in the high field region, conductor and dielectric losses and small signal channel current.<>
Keywords
carrier mobility; microwave field effect transistors; semiconductor device models; EM model; T-gate TW-FETs; carrier velocity saturation; design criteria; device geometry; dielectric losses; exponentially growing waves; high field region; positive gain; small signal channel current; travelling wave FETs; Conductivity; Conductors; Dielectric devices; Dielectric losses; FETs; Geometry; Guidelines; Optical propagation; Solid modeling; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406202
Filename
406202
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