Switching behaviour of high voltage IGBTs and its dependence on gate-drive

Author

Gerstenmaier, Y.C. ; Stoisiek, M.

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1997

fDate

26-29 May 1997

Firstpage

105

Lastpage

108

Abstract

Simulation results on high voltage 5.5 kV IGBTs are presented for both IGBTs with triangular shaped electrical field (Type A) and nearly rectangular electrical field distribution (Type B) under blocking voltage conditions. Measurement results of a 3.5 kV IGBT are compared with respective simulations. With unchanged gate-control, for high voltage B-type IGBTs a dramatic increase in switching speed is observed compared with A-type IGBTs, which may lead to destruction of the IGBT and the corresponding freewheeling diode. A study on the influence of the gate drive on the switching behaviour of the IGBT and the diode in the circuit is presented. Fundamental aspects of the switching of IGBT and diode, which are of general interest and apply also to power-MOSFETS, are revealed and are explained by a simple model. Remedies to avoid device failure caused by the increased switching speed of the B-type IGBT are shown

Keywords

insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device reliability; 3.5 kV; 5.5 kV; Miller plateau deviation; blocking voltage conditions; device failure avoidance; freewheeling diode; gate-drive dependence; high voltage IGBTs; model; nearly rectangular electrical field distribution; simulation results; switching behaviour; switching speed; triangular shaped electrical field distribution; Capacitors; Circuit simulation; Diodes; Insulated gate bipolar transistors; Semiconductor device measurement; Snubbers; Switching circuits; Switching loss; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601446

Filename

601446