Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger´s equation

Author

Saadat, I.A. ; Krusius, J.P.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

284

Lastpage

292

Abstract

The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed

Keywords

Schrodinger equation; microwave oscillators; semiconductor quantum wells; solid-state microwave devices; 300 to 600 GHz; compound-semiconductor heterostructure tunneling resonator; device parameters; double-barrier tunneling structure; millimeter-wave device applications; quantum mechanical oscillations; time-dependent Schrodinger equation; Eigenvalues and eigenfunctions; Frequency; Heterojunctions; Oscillators; Poisson equations; Quantum mechanics; Resonant tunneling devices; Schrodinger equation; Substrates; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79845

Filename

79845