DocumentCode
3236137
Title
Accumulation-mode MOS varactor modeling for RF applications valid up to 40GHz
Author
Hu, Jiawei ; Li, Zhiqun ; Li, Qin ; Li, Wei ; Zhang, Li
Author_Institution
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
fYear
2010
fDate
8-11 May 2010
Firstpage
885
Lastpage
888
Abstract
This paper presented a RF model of an accumulation-mode MOS varactor for RF applications. Based on this model, simple and continuous equation has been used for describing the characteristics of the device in all operation regions. With a single topology composed of lumped elements, this model can be easily used in commercial circuit simulators. Based on S-parameter measurement, excellent agreement was obtained between measured data and model up to 40 GHz.
Keywords
MOS capacitors; varactors; RF application; RF model; S-parameter measurement; accumulation-mode MOS varactor modeling; commercial circuit simulator; continuous equation; lumped elements; Circuit simulation; Equations; Equivalent circuits; Fingers; Integrated circuit modeling; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525166
Filename
5525166
Link To Document