• DocumentCode
    3236169
  • Title

    Bipolar silicon high-power semiconductors for pulsed power - devices, applications, limits

  • Author

    Przybilla, J. ; Keller, R. ; Kellner-Werdehausen, U. ; Schulze, H.-J. ; Niedernostheide, F.-J.

  • Author_Institution
    Eupec GmbH, Warstein
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    For many years, Eupec has manufactured bipolar high-voltage semiconductor devices that, after appropriate modifications, are also suitable for pulsed power applications. This is particularly true for direct light-triggered thyristors (LTTs) with breakdown voltages up to 8 kV and for soft recovery diodes with breakdown voltages up to 9 kV. Presently, Eupec is developing 13-kV LTTs and 13-kV diodes. By using such high-voltage rectifiers, the number of components in applications with several devices connected in series can be reduced, saving money and improving reliability of the total system. Typical application areas of high-voltage rectifiers in the field of pulsed power applications are reviewed in this paper
  • Keywords
    power semiconductor diodes; pulsed power technology; rectifying circuits; reliability; silicon; thyristors; 13 kV; Si; bipolar silicon high-power semiconductors; high-voltage rectifiers; light-triggered thyristors; pulsed power applications; reliability; soft recovery diodes; Cathodes; Optical pulses; Power system reliability; Protection; Pulse amplifiers; Rectifiers; Resistors; Semiconductor diodes; Silicon; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-8586-1
  • Type

    conf

  • DOI
    10.1109/MODSYM.2004.1433532
  • Filename
    1433532