DocumentCode :
3236169
Title :
Bipolar silicon high-power semiconductors for pulsed power - devices, applications, limits
Author :
Przybilla, J. ; Keller, R. ; Kellner-Werdehausen, U. ; Schulze, H.-J. ; Niedernostheide, F.-J.
Author_Institution :
Eupec GmbH, Warstein
fYear :
2004
fDate :
23-26 May 2004
Firstpage :
161
Lastpage :
164
Abstract :
For many years, Eupec has manufactured bipolar high-voltage semiconductor devices that, after appropriate modifications, are also suitable for pulsed power applications. This is particularly true for direct light-triggered thyristors (LTTs) with breakdown voltages up to 8 kV and for soft recovery diodes with breakdown voltages up to 9 kV. Presently, Eupec is developing 13-kV LTTs and 13-kV diodes. By using such high-voltage rectifiers, the number of components in applications with several devices connected in series can be reduced, saving money and improving reliability of the total system. Typical application areas of high-voltage rectifiers in the field of pulsed power applications are reviewed in this paper
Keywords :
power semiconductor diodes; pulsed power technology; rectifying circuits; reliability; silicon; thyristors; 13 kV; Si; bipolar silicon high-power semiconductors; high-voltage rectifiers; light-triggered thyristors; pulsed power applications; reliability; soft recovery diodes; Cathodes; Optical pulses; Power system reliability; Protection; Pulse amplifiers; Rectifiers; Resistors; Semiconductor diodes; Silicon; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8586-1
Type :
conf
DOI :
10.1109/MODSYM.2004.1433532
Filename :
1433532
Link To Document :
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