Solid state mass memories

Author

Jouve, H.

Author_Institution

CEA/DLETI, Grenoble, France

fYear

1989

fDate

8-12 May 1989

Firstpage

42385

Abstract

Summary form only given. Rather than using the reversability of a magnetic memory cell, it is becoming necessary to develop a mass storage device with a very fast access time and a high execution speed, to the detriment of long-period storage. The purpose is to store 2-10 MB over more than 30-day periods. This type of memory shows dynamic characteristics similar to those of semiconductor memories. Three technologies that can be foreseen are discussed: (1) higher-capacity static RAMs with associated or hybrid batteries, (2) a DRAM-type memory cell, connecting a transistor to a condenser, and (3) Bloch line memory, a continued evolution of magnetic-bubble memories

Keywords

magnetic bubble memories; random-access storage; 2 to 10 MB; Bloch line memory; DRAM-type memory cell; condenser; hybrid batteries; magnetic memory cell; magnetic-bubble memories; mass storage device; semiconductor memories; solid state mass memories; static RAMs; transistor; Batteries; Costs; Data processing; EPROM; Image processing; Image storage; Magnetic analysis; Random access memory; Solid state circuits; TV;

fLanguage

English

Publisher

ieee

Conference_Titel

CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.

Conference_Location

Hamburg

Print_ISBN

0-8186-1940-6

Type

conf

DOI

10.1109/CMPEUR.1989.93333

Filename

93333