DocumentCode :
3236194
Title :
E2PROM product issues and technology trends
Author :
Owen, William H. ; Tchon, Wallace E.
Author_Institution :
Xicor Inc., Milpitas, CA, USA
fYear :
1989
fDate :
8-12 May 1989
Firstpage :
42386
Lastpage :
42388
Abstract :
The E2PROM (electrically erasable and programmable read-only memory), the fastest growing new form of solid-state memory, combines nonvolatility and changeability which can be changed by simple logic-level signals, therefore providing in-system change capability. Since time-to-market is a crucial system issue, as frequent changes in multiple location and rapid obsolescence are pressing problems. E2 PROMs, acting as nonvolatile memories and peripherals in up-based systems, play a growing role in presenting a solution. E2PROM technology is divided into two major approaches. One approach is an extension of the basic floating-gate concept used in EPROMs. The other is a nitride technique called MNOS which has existed over several decades. E2PROM system applications are discussed. The most advanced E2PROMs today are easy-to-use single 5-V power supply, high-speed CMOS devices. It is noted that, with the obstacles of the past removed, E2PROMs are increasingly being used in new designs
Keywords :
EPROM; 5 V; CMOS devices; E2PROM; MNOS; changeability; electrically erasable and programmable read-only memory; floating-gate; in-system change capability; logic-level signals; nitride technique; nonvolatility; power supply; solid-state memory; Acceleration; Atmosphere; Costs; EPROM; Logic devices; Microprocessors; Nonvolatile memory; PROM; Power supplies; Product development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
Conference_Location :
Hamburg
Print_ISBN :
0-8186-1940-6
Type :
conf
DOI :
10.1109/CMPEUR.1989.93334
Filename :
93334
Link To Document :
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