• DocumentCode
    3236245
  • Title

    High power semiconductor-based nano and subnanosecond, pulse generator with a low delay time

  • Author

    Grekhov, I. ; Korotkov, S. ; Stepaniants, A. ; Khristyuk, D. ; Voronkov, V.

  • Author_Institution
    Ioffe Inst., Russian Acad. of Sci., St. Petersburg
  • fYear
    2004
  • fDate
    23-26 May 2004
  • Firstpage
    178
  • Lastpage
    180
  • Abstract
    One of the promising designs of high power nano and subnanosecond pulse generators is based on FID-stacks triggered with a nanosecond pulse of overvoltage. This pulse is usually formed by semiconductor opening switches (DSRDs). Delay time of these switches is equal to the sum of forward and reverse current pulse duration, i.e., several hundreds of nanoseconds. Due to special diode structure, a novel opening switch, inverse recovery diode (IRD), is capable of forming the nanosecond pulse of voltage with a delay time equal to the reverse current pulse duration (15-20 ns). The high voltage nanosecond pulse formed with the IRD is used for fast triggering of the first DC-biased FID from a high voltage DC-biased FID-stack. The formed fast overvoltage pulse is applied to the second FID, etc. As a result, the high voltage FID-stack is switched on the order of a nanosecond. The total delay time of the IRD-FID based pulse generator is less than 30 ns
  • Keywords
    charge storage diodes; power semiconductor switches; pulse generators; 15 to 20 ns; current pulse duration; drift step recovery diodes; fast ionization dynistors-stacks; high power semiconductor; inverse recovery diode; overvoltage pulse; semiconductor opening switches; subnanosecond pulse generator; Charge carrier processes; Delay effects; Ionization; Plasma density; Plasma devices; Plasma materials processing; Pulse generation; Semiconductor diodes; Switches; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-8586-1
  • Type

    conf

  • DOI
    10.1109/MODSYM.2004.1433537
  • Filename
    1433537