DocumentCode :
3236271
Title :
Hierarchical architecture for fast CMOS SRAMs
Author :
Schmitt-Landsiedel, D. ; Neuendorf, G. ; Hoppe, B. ; Mattausch, H.J.
Author_Institution :
Siemens AG, Munchen, West Germany
fYear :
1989
fDate :
8-12 May 1989
Firstpage :
11689
Lastpage :
12420
Abstract :
A new concept for the design of fast SRAMs is described, introducing a highly hierarchical architecture with short word and bit lines. Computational results based on layouts in a standard 1-μm technology yield a 9-ns access time for a 64 K SRAM. The authors estimate that the access time is at least 50% longer in a conventional architecture, while the area is about 30% smaller. No address transition detection circuitry or other internal timing is required for the hierarchical approach. No critical analog circuit parts are applied. The new concept shows little sensitivity with respect to technology variations and can also be used for future technology generations with reduced supply voltage
Keywords :
CMOS integrated circuits; memory architecture; random-access storage; 1 micron; 64 kB; 9 ns; CMOS SRAMs; access time; bit lines; hierarchical architecture; layouts; reduced supply voltage; CMOS logic circuits; CMOS process; CMOS technology; Computer architecture; Conductivity; Decoding; Delay; Random access memory; Read-write memory; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
Conference_Location :
Hamburg
Print_ISBN :
0-8186-1940-6
Type :
conf
DOI :
10.1109/CMPEUR.1989.93338
Filename :
93338
Link To Document :
بازگشت