p-HFETs with GaAsSb channel

Author

Tantillo, J. ; Cook, P. ; Evans, K.R. ; Martinez, M.J. ; Bobb, R. ; Martinez, E.J. ; Stutz, C.E. ; Schuermeyer, F.L.

Author_Institution

Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

316

Lastpage

320

Abstract

The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; gallium compounds; GaAs substrates; GaAsSb-AlGaAs-GaAs; MBE; drain current; drain voltage; gate current; gate voltage; heterostructure FET; pinch-off voltage; pseudomorphic HFET; recessed gate process; transconductance; valence band discontinuity; CMOS technology; Circuits; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79849

Filename

79849