A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design

Author

Kumar, M. Jagadesh ; Venkateshrao, D.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India

fYear

2003

fDate

4-8 Jan. 2003

Firstpage

489

Lastpage

492

Abstract

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.

Keywords

Ge-Si alloys; Schottky barriers; VLSI; heterojunction bipolar transistors; logic design; semiconductor device models; semiconductor materials; silicon-on-insulator; BiCMOS VLSI; Kirk effect suppression; PNP HBT; SCBT; SOI substrate; Schottky collector bipolar transistor; Si-SiO₂; SiGe; SiGe-base PNM transistor; VLSI logic design; collector resistance; current gain; cut-off frequency; lateral PNM transistor; nonsaturating VLSI; reverse recovery time; silicon-on-insulator; Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Logic design; Performance gain; Silicon germanium; Silicon on insulator technology; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2003. Proceedings. 16th International Conference on

ISSN

1063-9667

Print_ISBN

0-7695-1868-0

Type

conf

DOI

10.1109/ICVD.2003.1183181

Filename

1183181