Title :
A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design
Author :
Kumar, M. Jagadesh ; Venkateshrao, D.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India
Abstract :
A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.
Keywords :
Ge-Si alloys; Schottky barriers; VLSI; heterojunction bipolar transistors; logic design; semiconductor device models; semiconductor materials; silicon-on-insulator; BiCMOS VLSI; Kirk effect suppression; PNP HBT; SCBT; SOI substrate; Schottky collector bipolar transistor; Si-SiO2; SiGe; SiGe-base PNM transistor; VLSI logic design; collector resistance; current gain; cut-off frequency; lateral PNM transistor; nonsaturating VLSI; reverse recovery time; silicon-on-insulator; Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Logic design; Performance gain; Silicon germanium; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
VLSI Design, 2003. Proceedings. 16th International Conference on
Print_ISBN :
0-7695-1868-0
DOI :
10.1109/ICVD.2003.1183181
